? 2004 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c32a i c90 t c = 90 c21a i f90 55 a i cm t c = 25 c, 1 ms 110 a ssoa v ge = 15 v, t vj = 125 c, r g = 5 ? i cm = 70 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 10 ? 10 s p c t c = 25 c 350 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c f c mounting force 22...130/5...30 n/lb maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 6g v ces = 1700 v i c25 = 32 a v ce(sat) = 5.0 v t fi(typ) = 50 ns ixgx 32n170ah1 g = gate, c = collector, e = emitter, tab = collector features z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies ds99070a(10/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 600 a v ge = 0 v note 1 t j = 125 c10ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v t j = 25 c 4.0 5.0 v t j = 125 c 4.8 v high voltage igbt with diode advance technical information plus247 (ixgx) g c e (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c25 ; v ce = 10 v 16 23 s note 2 c ies 3500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 310 pf c res 40 pf q g 155 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 30 nc q gc 51 nc t d(on) 46 ns t ri 57 ns t d(off) 260 500 ns t fi 50 100 ns e off 2.5 4.2 mj t d(on) 48 ns t ri 59 ns e on 4.0 mj t d(off) 300 ns t fi 70 ns e off 3.0 mj r thjc 0.35 k/w r thck 0.15 k/w inductive load, t j = 125 c i c = i c25 , v ge = 15 v r g = 2.7 ?, v ce = 0.5 v ces inductive load, t j = 25 c i c = i c25 , v ge = 15 v r g = 2.7 ?, v ce = 0.5 v ces ixgx 32n170ah1 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. see dh60-18a and ixgh32n170a datasheets for additional characteristics plus247 outline (ixgx) reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 60a, v ge = 0 v, pulse test, 2.4 2.7 v t 300 s, duty cycle d 2 % t j = 125 c 2.4 v i rm i f = 60a, v ge = 0 v, -di f /dt = 600 a/ s50a v r = 1200 v t j = 125 c55 a t rr 150 ns t j = 125 c 350 ns r thjc 0.35 k/w
|
